2D Materials Bring New Possibilities to Electronics industry
The field of electronics is constantly evolving, and new developments in materials science are providing new possibilities for the industry. One of the most exciting new areas of research is the use of two-dimensional (2D) materials in the development of transistors.
A transistor is a fundamental building block of electronic devices, such as computers, smartphones, and televisions. It is a device that can control the flow of electricity, allowing for the amplification and switching of signals.
Traditional transistors were made of silicon material, that have been the core of the electronics industry for many decades.
However, silicon transistors are reaching their limits in terms of miniaturization and performance, and advanced materials are needed for the progress of the industry.
2D materials, such as graphene, Molybdenum disulfide S2 (MoS2), and transition metal dichalcogenides (TMDs), have unique electronic properties that make them attractive for use in transistors.
For example, Graphene is a single layer of carbon atoms arranged in a hexagonal lattice. It has high electron mobility and good thermal conductivity, which makes it ideal for high-speed and high-power electronic applications.
Similarly, Molybdenum disulfide S2 (MoS2), is a two-dimensional material composed of layers of molybdenum and sulfur atoms. It has a bandgap that can be tuned for electronic applications, making it suitable for use in field-effect transistors (FETs).
Moreover, Transition metal dichalcogenides (TMDs) such as two-Dimensional Tungsten Disulfide (WS2) and Diselenide (WSe2) Monolayers have also been used in 2D transistors due to their electronic properties and potential for device miniaturization.
Beyond Moore’s Law: Overcoming Challenges in 2D Material Synthesis
According to Moore’s Law, a prediction made by Gordon Moore, co-founder of Intel, in 1965, the quantity of transistors on a microchip would double each year after 1960,.
In adherence to the Moore’s Law, electronic components such as transistors in numerous electronic devices have been progressively shrinking in size, accelerating in speed, and enhancing in power continuously.
However, as transistors get miniaturized day by day, it is becoming harder to maintain this rate of growth.
Many scientists and researchers are trying to solve this problem for years and one of such research has come to a conclusion in recent times.
According to a study published in the Nature on 18th January 2023, an international team of scientists have developed a novel way to grow 2D materials using a method that could accelerate the commercialization of 2D transistor-based electronics.
The team, led by Sang-Hoon Bae, an assistant professor of mechanical engineering and materials science at the McKelvey School of Engineering at Washington University in St. Louis, has developed a “promising” growing process that could power next-generation electronics and support Moore’s law.
The researchers developed a growing method that can overcome three extremely difficult challenges to create the new materials.
These challenges include securing single crystallinity at wafer-scale, preventing irregular thickness during growth at wafer-scale, and vertical heterostructures at wafer-scale.
To address these challenges, the research team designed a novel geometric-confined structure that allows for kinetic control of 2D materials, enabling the precise growth of the material to achieve the desired properties.
Moreover, the team demonstrated the creation of “single-domain heterojunction TMDs at the wafer scale” by using various substrates and chemical compounds to confine the growth of the nuclei.
This means that they were able to create materials with heterojunctions, which are regions where two different materials meet, that were uniform in composition and structure over a large area, making them suitable for use in large-scale electronic devices.
In the words of Sang-Hoon Bae, “the new confined growth technique can bring all the great findings in physics of 2D materials to the level of commercialization by allowing the construction of single domain layer-by-layer heterojunctions at the wafer-scale.”
Moreover, this growth technique will lay a strong foundation for 2D materials to fit into industrial settings, accelerating the creation of new manufacturing processes for 2D transistors.
Furthermore, it will pave the way for faster and more efficient next generation electronics.
Conclusion
The electronic materials sector is enthused by the potential of 2D materials and is taking active measures to overcome the challenges to make these new possibilities a reality.
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